Part Number
Part Number:
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
CAGE Information
| Code | Company |
|---|---|
| 01295 | TEXAS INSTRUMENTS INCORPORATED DBA T |
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS AND METAL |
| ABBH | INCLOSURE MATERIAL | GLASS AND METAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN |
| AXGY | MOUNTING METHOD | TERMINAL |
| ADAV | OVERALL DIAMETER | 0.359 INCHES NOMINAL |
| CTRD | POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 600.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-5 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PNP |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TEST | TEST DATA DOCUMENT | 20747-103-314 SPECIFICATION |
| ABHP | OVERALL LENGTH | 0.250 INCHES NOMINAL |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |