Part Number
Part Number:
NSN:
NIIN:
Item Name:
SEMICONDUCTOR DEVICE SET
Definition:
A GROUPING OF TWO OR MORE INDIVIDUAL SEMICONDUCTOR DEVICES, SUCH AS TRANSISTORS, DIODES, AND PHOTO SEMICONDUCTOR DEVICES. IT INCLUDES MATCHED PAIRS. EXCLUDES ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE ASSEMBLY. FOR INTERCONNECTED ITEMS FUNCTIONING AS POWER SUPPLY RECTIFIERS, SEE RECTIFIER, SEMICONDUCTOR DEVICE.
CAGE Information
| Code | Company |
|---|---|
| 31338 | SEMITRONICS CORP |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL ALL TRANSISTOR |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL ALL TRANSISTOR |
| AXGY | MOUNTING METHOD | TERMINAL ALL TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL TRANSISTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD ALL TRANSISTOR |
| ALAT | CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | N-CHANNEL INSULATED GATE TYPE ALL TRANSISTOR |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |
| ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
| ADAV | OVERALL DIAMETER | 0.219 INCHES NOMINAL ALL TRANSISTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES SOURCE CUTOFF CURRENT MINOR ALL TRANSISTOR |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 35.0 MAXIMUM DRAIN TO GATE VOLTAGE ALL TRANSISTOR |
| ABBH | INCLOSURE MATERIAL | METAL ALL TRANSISTOR |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| BBJD | FIELD FORCE EFFECT TYPE | ELECTROSTATIC CHARGE |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM ALL TRANSISTOR |
| ABHP | OVERALL LENGTH | 0.190 INCHES NOMINAL ALL TRANSISTOR |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT ALL TRANSISTOR |