National Stock Number (NSN) Output Data
NSN:
NIIN:
Item Name:
SEMICONDUCTOR DEVICE , PHOTO
Definition:
A SEMICONDUCTOR DEVICE (1) WHICH IS RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEAT SINK. EXCLUDES SEMICONDUCTOR DEVICE (1), DIODE; SEMICONDUCTOR DEVICE (1), THYRISTOR AND TRANSISTOR. FOR SOLID STATE DEVICES WHICH EMIT VISIBLE OR INFRARED RADIANT ENERGY, SEE LIGHT EMITTING DIODE.
Reference/Part Number
Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
---|---|---|---|---|---|---|---|---|
61050-105 | 31757 | A | 5 | 9 | 5 | ZZ | ||
L14F1 | 03508 | F | 5 | 9 | 5 | TX | ||
OMS1145 | 32694 | A | 3 | 2 | 5 | ZZ | ||
5366069-1 | 53711 | A | 1 | 2 | A | TX | ||
L14F1 | 34371 | A | 5 | 9 | 5 | TX | ||
OMS1085 | 32694 | A | 5 | 9 | 5 | ZZ |
CAGE Information
Code | Company |
---|---|
03508 | GENERAL ELECTRIC CO SEMI-CONDUCTOR P |
31757 | MICROPAC INDUSTRIES INC. |
32694 | OPTEK TECHNOLOGY INC |
53711 | NAVAL SEA SYSTEMS COMMAND |
34371 | INTERSIL CORPORATION |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES PEAK FORWARD SURGE CURRENT NOMINAL AND 100.00 NANOAMPERES REPETITIVE PEAK FORWARD CURRENT PEAK |
CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
ABBH | INCLOSURE MATERIAL | METAL AND GLASS |
TEST | TEST DATA DOCUMENT | 53711-5366069 DRAWING |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO COLLECTOR VOLTAGE, DC |
ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
FEAT | SPECIAL FEATURES | BASE LEAD 0.05 IN. MAX.; INTERNAL JUNCTION CONFIGURATION: NPN |
AFZC | FUNCTION FOR WHICH DESIGNED | PHOTOTRANSISTOR AND AMPLIFIER |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
CTMZ | SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
AGAV | END ITEM IDENTIFICATION | AEGIS |
ABHP | OVERALL LENGTH | 0.225 INCHES MINIMUM AND 0.255 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-18 |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |