National Stock Number (NSN) Output Data
Definition:
TWO OR MORE DISCRETE SEMICONDUCTOR DEVICES SUCH AS DIODE(S) AND/OR TRANSISTOR(S), PERMANENTLY CASED, ENCAPSULATED, OR POTTED TOGETHER TO FORM AN INSEPARABLE UNIT. EXCLUDES DEVICES HAVING ONE OR MORE COMPONENTS OTHER THAN SEMICONDUCTOR DEVICES. THE INDIVIDUALLY DISTINCT DEVICES FORMING THE UNIT MAY BE INTERNALLY CONNECTED. THE UNIT IN ITSELF DOES NOT PERFORM A COMPLETE SPECIFIC FUNCTION AND CANNOT BE ASSIGNED A MORE DEFINITE ITEM NAME. IT MAY INCLUDE OR CONSIST OF INSEPARABLE MATCHED PAIRS. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FORMED ON OR WITHIN A SEMICONDUCTOR MATERIAL SUBSTRATE, FORMED ON AN INSULATING SUBSTRATE OR FORMED ON A COMBINATION OF BOTH OF THESE TYPES, SEE MICROCIRCUIT (AS MODIFIED). EXCLUDES NETWORK (AS MODIFIED); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; AND SEMICONDUCTOR DEVICE ASSEMBLY. DO NOT USE IF MORE SPECIFIC NAME APPLIES.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 1081H10H17 | 04804 | A | C | 1 | 6 | ZZ | AC | |
| 2264018 | 10001 | A | E | 8 | 5 | TX | ||
| 2N2060 | 81350 | M | C | 1 | 6 | ZZ | AC | |
| 917AS700-29 | 30003 | A | C | 1 | 6 | ZZ | AC | |
| L532001061 | 36090 | A | E | 8 | 5 | TX | ||
| L533000008 | 36090 | A | E | 8 | 5 | TX | ||
| 4JD12X018 | 03508 | F | E | 8 | 4 | CL | ||
| JANTX2N2060L | 81349 | M | 2 | 2 | E | TX | ||
| 7902441-01 | 90536 | A | C | 1 | 6 | ZZ | AC | |
| SD4454H | 04713 | A | E | 8 | 5 | TX | ||
| 2N2060 | 81349 | M | C | 1 | 6 | ZZ | AC | |
| SMB526517 | 80063 | A | E | 8 | 5 | CL | ||
| 2264018REV1 | 53711 | A | C | 1 | 6 | ZZ | AC | |
| 66-189955-01 | 11530 | A | E | 8 | 1 | TX | ||
| 1081H07H46 | 04804 | A | C | 1 | 6 | ZZ | AC | |
| 2N3411 | 07263 | A | E | 8 | 6 | TX | ||
| 2-00055-528 | 03848 | H | E | 8 | 1 | ZZ | ||
| JAN2N2060 | 81350 | M | C | 1 | 6 | ZZ | AC | |
| FSP2 | 07263 | A | E | 8 | 1 | HD | ||
| JAN2N2060A | 81350 | M | C | 1 | 6 | ZZ | AC | |
| MIL-PRF-19500/270 | 81349 | M | 4 | 1 | E | ZZ | ||
| 1081H09H16 | 04804 | A | C | 1 | 6 | ZZ | AC | |
| 2N2060 | 04713 | A | C | 1 | 6 | ZZ | AC | |
| JANTX2N2060A | 81350 | M | C | 1 | 6 | ZZ | AC | |
| 8625597 | 19200 | A | E | 8 | 2 | BF | ||
| 2N2060 | 59993 | C | C | 1 | 6 | ZZ | AC |
CAGE Information
| Code | Company |
|---|---|
| 03508 | GENERAL ELECTRIC CO SEMI-CONDUCTOR P |
| 04804 | NORTHROP GRUMMAN SYSTEMS CORPORATION |
| 10001 | NAVAIR AND NAVSEA MANAGED ORIGINAL D |
| 81350 | JOINT ARMY-NAVY SPECIFICATIONS PROMU |
| 30003 | NAVAL AIR SYSTEMS COMMAND |
| 36090 | LOCKHEED MARTIN LIBRASCOPE CORP |
| 81349 | MILITARY SPECIFICATIONS PROMULGATED |
| 90536 | LOCKHEED MARTIN CORPORATION DBA LOCK |
| 04713 | FREESCALE SEMICONDUCTOR INC. |
| 80063 | US ARMY COMMUNICATIONS & ELECTRONICS |
| 53711 | NAVAL SEA SYSTEMS COMMAND |
| 11530 | LOCKHEED MARTIN CORPORATION DIV LOCK |
| 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 03848 | ARMA DIV AMBAC INDUSTRIES INC |
| 19200 | U S ARMY ARMAMENT RESEARCH & DEVELOP |
| 59993 | INTERNATIONAL RECTIFIER CORPORATION |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CTQX | CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT BLANK ALL TRANSISTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/270 GOVERNMENT SPECIFICATION |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM |
| ABBH | INCLOSURE MATERIAL | METAL |
| ADAV | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| ABHP | OVERALL LENGTH | 0.150 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 2.12 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL TRANSISTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD |
| ASKA | COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| FEAT | SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |