National Stock Number (NSN) Output Data
NSN:
NIIN:
Item Name:
MICROCIRCUIT , MEMORY
Definition:
A CIRCUIT DESIGNED TO STORE INFORMATION AND/OR CODED INSTRUCTIONS FOR LATER USE. ITEM HAS PINS OR OTHER CONNECTIONS TO INSTALL IN A COMPUTER OR COMPUTING DEVICE. DOES NOT INCLUDE MAGNETIC DRUMS, TAPES, PUNCHED CARDS OR THE LIKE. FOR ITEMS THAT HAVE PORTABLE TYPE CONNECTIONS SEE MEMORY, PORTABLE, SOLID STATE.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| N0078-830 | 34371 | A | 5 | 9 | 6 | TX | ||
| ROM/PROM FAMILY 078 | 16236 | A | 5 | 1 | 9 | ZZ | ||
| 932905-830 | 82577 | A | 3 | 2 | 3 | TX | ||
| CC6323-830 | 18324 | A | 5 | 2 | 6 | TX | ||
| FD1464-18760 | 50364 | F | 5 | 9 | 6 | TX |
CAGE Information
| Code | Company |
|---|---|
| 16236 | DLA LAND AND MARITIME |
| 34371 | INTERSIL CORPORATION |
| 82577 | RAYTHEON COMPANY DBA RAYTHEON |
| 18324 | PHILIPS SEMICONDUCTORS INC |
| 50364 | MMI/AMD |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| ABKW | OVERALL HEIGHT | 0.350 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| CRHL | BIT QUANTITY (NON-CORE) | 8192 |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND BURN IN AND W/ENABLE |
| ADAU | BODY HEIGHT | 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 FLAT LEADS |
| CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
| ADAQ | BODY LENGTH | 0.890 INCHES MINIMUM AND 0.930 INCHES MAXIMUM |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CSWJ | WORD QUANTITY (NON-CORE) | 2048 |
| CZEQ | TIME RATING PER CHACTERISTIC | ERR-060 NOMINAL HAND PULL AND ERR-060 NOMINAL HAND |
| CZER | MEMORY DEVICE TYPE | ROM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 409.6 MILLIWATTS |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| ADAT | BODY WIDTH | 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |