Part Number
Part Number:
NSN:
NIIN:
Item Name:
LIGHT EMITTING DIODE
Definition:
A TWO ELECTRODE, SOLID STATE, OPTOELECTRONIC DEVICE THAT EMITS VISIBLE OR INFRARED RADIANT ENERGY WHEN ELECTRICALLY ENERGIZED. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEAT SINK. EXCLUDES LAMP, CARTRIDGE; AND LIGHT, INDICATOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO INFRARED OR RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE (1), PHOTO.
CAGE Information
| Code | Company |
|---|---|
| 32694 | OPTEK TECHNOLOGY INC |
Federal Supply Class
Title
OPTOELECTRONIC DEVICES AND ASSOC
Inclusions:
INCLUDES OPTOELECTRONIC DEVICES AND ASSEMBLIES WHICH DISPLAY NUMERIC, ALPHA-NUMERIC, SYMBOLIC, OR GRAPHIC INFORMATION, EMITTERS, AND NONDISPLAY OPTOELECTRONIC DEVICES, SUCH AS COUPLERS, DETECTORS, AND SWITCHES WHICH PERFORM AN ACTIVE FUNCTION IN AN ELECTRONIC SYSTEM%
Exclusions:
EXCLUDES ELECTRIC LIGHTING FIXTURES, LAMPS, AND ASSOCIATED HARDWARE%
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL AND GLASS |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.0 MAXIMUM REVERSE VOLTAGE, DC |
| FEAT | SPECIAL FEATURES | SEMICONDUCTOR MATERIAL INCLUDES ALUMINUM |
| CTRX | COLOR TONE PRODUCED PER SOURCE | INFRARED SEMICONDUCTOR |
| ABHP | OVERALL LENGTH | 0.137 INCHES MINIMUM AND 0.166 INCHES MAXIMUM |
| CTMZ | SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
| AXGY | MOUNTING METHOD | PRESS FIT |
| AGAV | END ITEM IDENTIFICATION | 1260-01-165-3959 CONTROL-DISPLAY SYSTEM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| AFZC | FUNCTION FOR WHICH DESIGNED | INFRARED EMITTING |
| CTRD | POWER RATING PER CHARACTERISTIC | 90.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| BBJD | FIELD FORCE EFFECT TYPE | ELECTROSTATIC CHARGE |