Part Number
Part Number:
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
CAGE Information
Code | Company |
---|---|
07421 | INTERSTATE ELECTRONICS CORPORATION |
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
AXGY | MOUNTING METHOD | TERMINAL |
ABBH | INCLOSURE MATERIAL | METAL |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | SOURCE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
ALAT | CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | P-CHANNEL JUNCTION TYPE |
ZZZY | REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS | SELECTED ITEM IN ACCORDANCE WITH IEC DWG NO. P00347250 |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
CTQX | CURRENT RATING PER CHARACTERISTIC | 2.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
ABKW | OVERALL HEIGHT | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
ABHP | OVERALL LENGTH | 0.250 INCHES NOMINAL |
ABJT | TERMINAL LENGTH | 0.500 INCHES NOMINAL |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |