Part Number
Part Number:
NSN:
NIIN:
Item Name:
MICROCIRCUIT , DIGITAL
Definition:
A MICROCIRCUIT SPECIFICALLY DESIGNED TO GENERATE, MODIFY, OR PROCESS ELECTRICAL SIGNALS WHICH OPERATE WITH TWO DISTINCT OR BINARY STATES. THESE STATES ARE COMMONLY REFERRED TO AS ON AND OFF, TRUE AND FALSE, HIGH AND LOW, OR "1" AND "0".
CAGE Information
| Code | Company |
|---|---|
| C4751 | EPCOS AG |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| CQZP | INPUT CIRCUIT PATTERN | 9 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | -0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
| CZEQ | TIME RATING PER CHACTERISTIC | 1100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| AGAV | END ITEM IDENTIFICATION | COMMON AGE TYPE F/TF-15 |
| ADAU | BODY HEIGHT | 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | W/ENABLE AND EDGE TRIGGERED AND POSITIVE OUTPUTS AND HERMETICALLY SEALED AND MONOLITHIC AND ASYNCHRONOUS AND LOW POWER AND SYNCHRONOUS AND HIGH SPEED AND INTERNALLY COMPENSATED AND PRESETTABLE AND RESETTABLE |
| ADAQ | BODY LENGTH | 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |