Part Number
Part Number:
NSN:
NIIN:
Item Name:
SEMICONDUCTOR DEVICE , DIODE
Definition:
A TWO ELECTRODE SEMICONDUCTOR DEVICE HAVING AN ASYMMETRICAL VOLTAGE - CURRENT CHARACTERISTIC. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES LIGHT EMITTING DIODE AND SEMICONDUCTOR DEVICE,PHOTO. FOR ITEMS CONTAINING MATERIAL SUCH AS SELENIUM AND COPPER OXIDE, SEE RECIFIER, METALLIC.
CAGE Information
| Code | Company |
|---|---|
| 50101 | MICROSEMI CORP-MASSACHUSETTS DBA MIC |
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.175 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.075 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM REVERSE VOLTAGE, DC |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTRG | CAPACITANCE RATING IN PICOFARADS | 30.5 MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE VARIABLE CAPACITOR |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MAXIMUM |
| ABBH | INCLOSURE MATERIAL | GLASS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -10.0/+10.0 |